| PART |
Description |
Maker |
| STB130N6F7 |
Low Crss/Ciss ratio for EMI immunity
|
STMicroelectronics
|
| 2SK3641 |
Low on-state resistance RDS(on)1 =14 m MAX. Low Ciss: Ciss = 930 pF TYP.
|
TY Semiconductor Co., Ltd
|
| FQD7P20TF |
Low Crss(typical 25 pF)
|
Fairchild Semiconductor
|
| UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS |
MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8
MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6
MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制
MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
|
意法半导
STMicroelectronics N.V.
|
| HVC202B |
Low matching error High capacitance ratio Low series resistance
|
TY Semiconductor Co., Ltd
|
| ASM3P2879AG-08TT ASM3I2879A-06OR ASM3I2879A-08SR A |
Low Power Peak Reducing EMI Solution 低功耗峰值抑制EMI解决方案
Low Power Peak Reducing EMI Solution 30 MHz, OTHER CLOCK GENERATOR, PDSO8
Octal D-Type Flip-Flops With Clear 20-TVSOP -40 to 85
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| LTC1483CS8 LTC1483 LTC1483C LTC1483CN8 LTC1483I LT |
From old datasheet system
Ultra-Low Power RS485 Low EMI Transceiver with Shutdown
|
LINER[Linear Technology]
|
| PCS3P622S04JG-08-TR PCS3P622S04JG-08-TT PCS3P622S0 |
Low Frequency Timing-Safe Peak EMI reduction IC
Low Frequency Timing-Safe垄芒 Peak EMI reduction IC
|
PulseCore Semiconductor
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| SFH235FA SFH235 Q62702-P273 Q62702-B0886 Q62702-B0 |
From old datasheet system
Silizium-PIN-Fotodiode mit Tageslichtsperrfilter
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance)
TV 22C 22#22D SKT RECP
|
http://
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SD1823 |
High forward current transfer ratio hFE. Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| 2SD1819A |
High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
